相关实验视频

Updated: Jul 23, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

AlGaN HEMT 结构生长在错误切割 Si ((111) 晶圆上

Alexei V Sakharov^1,2, Dmitri S Arteev², Evgenii E Zavarin^1,2

¹Submicron Heterostructures for Microelectronics, Research and Engineering Center, RAS, 26 Politekhnicheskaya, 194021 Saint-Petersburg, Russia.

Materials (Basel, Switzerland)

|June 28, 2023

概括

基板误差显著影响AlGaN/GaN晶体管的性能. 优化晶片误导可以提高二维电子气体的流动性,而接口粗度是一个关键因素.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
设备工程设备工程

背景情况:

化/化 (AlGaN/GaN) 高电子流动性晶体管 (HEMT) 对于高功率和高频应用至关重要.
基质特性,特别是切割误差的方向,可以影响表轴生长和设备性能.
了解这些影响对于优化HEMT制造至关重要.

研究的目的:

为了研究基质错误切割对AlGaN/GaN HEMT结构的影响.
为了确定最佳的误切角度,以增强设备属性.
确定影响二维电子气体流动性的主要因素.

主要方法:

在使用金属有机蒸汽相表 (MOVPE) 的错误切割Si(111) 晶圆上,AlGaN/GaN HEMT的表轴生长.
对菌株演变,表面形态和二维电子气体流动性的分析.
数值分析以将接口特性与电子移动性相关联.

主要成果:

晶圆误导会影响菌株的进化和生长过程中的表面形态.
在0.5°误撞角度观察到2D电子气体流动性的微弱最佳.
数字分析确定了接口粗度是影响电子移动性变化的主要因素.

结论:

基质误差是影响AlGaN/GaN HEMT特性的一个关键参数.
优化基质误差可以提高HEMT中的电子移动性.
接口粗度在确定电子移动性方面发挥着重要作用,指导未来的材料优化工作.

关键词:

这里是AlGaNN.这里是HEMT.MOVPEPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE MOVPE 在这里,我们可以看到Si Si Si Si.航空公司的运营商流动性.这是一个错误的切割.

更多相关视频

Atomically Traceable Nanostructure Fabrication

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

相关概念视频

Imperfections in Crystal Structure: Point, Line and Plane Defects

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...

Imperfections in Crystal Structure: Stoichiometric Point Defects

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...