改进了带有基于GeSeTe的Ovonic值切换设备的场效应晶体管的电气特性
Su Yeon Lee1, Hyun Kyu Seo1, Se Yeon Jeong1
1Artificial Intelligence Convergence Research Laboratory, Sahmyook University, Seoul 01795, Republic of Korea.
Materials (Basel, Switzerland)
|June 28, 2023
概括
新型值开关 (TS) 使用欧文值开关 (OTS) 材料改进了超场效应晶体管 (hyper-FET). 这些新的逻辑设备为节能电子产品提供更低的下值波动和更高的开/关比.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 设备工程 设备工程
背景情况:
- 传统的金属氧化物半导体场效应晶体管 (MOSFET) 在实现低功耗和能源效率方面面临限制,原因是固有的下值摆动约束.
- 在MOSFET中,热电子载体注入机制防止在室温下低于60mV/dec的下值摆动减少,阻碍下一代逻辑设备的开发.
研究的目的:
- 开发和评估用于低功耗逻辑设备的新门开关 (TS) 材料.
- 通过将新的 TS 材料集成到逻辑设备架构中来克服传统 MOSFET 的局限性.
主要方法:
- 这项研究采用了Ovonic值开关 (OTS) 材料,结合了绝缘体-金属过渡材料的故障控制和结构优化,以创建一种新的TS材料.
- 开发的TS材料与商用场效应晶体管 (FET) 设备连续集成,用于性能评估.
主要成果:
- 集成的基于GeSeTe的OTS设备显示了显著降低的下值波动值,超过了传统MOSFET的60mV/dec极限.
- 这些新型设备实现了高开/关电流比率,表明了高效的开关能力.
- 集成设备表现出了显著的耐用性,保持性能长达10个开关周期.
结论:
- 基于GeSeTe的OTS材料与FET的集成为开发下一代低功耗逻辑设备提供了可行的途径.
- 拟议的值开关方法有效地解决了传统MOSFET的子值摆动限制,为提高电子电路的能源效率铺平了道路.
相关概念视频
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