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Updated: Jul 25, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

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通过应用HfO2作为AlGaN/GaN高电子流动性晶体管中被动化的增强操作特性:模拟研究

Jun-Hyeok Choi1, Woo-Seok Kang1, Dohyung Kim1

  • 1Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea.

Micromachines
|June 28, 2023
PubMed
概括

这项研究使用混合被动化优化了AlGaN/GaN高电子移动性晶体管 (HEMT). 一个新的HfO2 / Si3N4结构改善了故障电压并保持了无线电频率 (RF) 性能,增强了约翰逊的性能.

关键词:
它们是AlGaN/GaNN.在HfO2中,二氧化是高电子移动性晶体管高电子移动性晶体管消极化是一种被动化.

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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors10:31

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Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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MOSFET: Enhancement Mode01:22

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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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