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在堆叠的Si纳米板门全方位晶体管中实现全底部介电隔离的新方案
Jingwen Yang1, Ziqiang Huang1, Dawei Wang1
1School of Microelectronics, Fudan University, Shanghai 200433, China.
Micromachines
|June 28, 2023
概括
堆叠纳米板门全方位 (NS-GAA) 晶体管的新制造方法提高了性能. 这种全BDI_Last方案可以增强驱动电流并降低集成电路的功耗.
科学领域:
- 半导体设备的物理和制造.
- 先进的晶体管架构的先进晶体管架构.
- 集成电路 (IC) 的设计和性能.
背景情况:
- 堆叠的纳米板门全方位 (NS-GAA) 晶体管的传统制造面临的挑战是介电隔离和源/排水表.
- 现有的方法,如Full BDI_First和穿孔式堵塞 (PTS),在工艺兼容性,应力工程和寄生效应方面存在局限性.
- 寄生道和门容量可以降低先进晶体管设计的性能.
研究的目的:
- 为NS-GAA设备提出和演示一种全新的源/排水第一 (S/D-first) 全底介电隔离 (BDI) 方案,称为全BDI_Last.
- 在完整的BDI_Last方案中整合一个牺牲Si0.5Ge0.5层,以改进制造.
- 与现有方法相比,评估拟议的全BDI_Last方案的电气性能和电路层面的好处.
主要方法:
- 利用 TCAD (技术计算机辅助设计) 模拟来建模和分析在堆叠的 NS-GAA 设备结构中的拟议的完整 BDI_Last 方案.
- 开发了一种与主要NS-GAA工艺兼容的制造流程,包括牺牲Si0.5Ge0.5层.
- 模拟和比较电气特性,包括驱动电流,短通道行为,寄生电容和逆变器环振荡器 (RO) 性能与全BDI_First和PTS方案相比.
主要成果:
- 全BDI_Last方案显示,与全BDI_First方法相比,驱动电流显著增加了4.78倍.
- 模拟显示,在使用Full BDI_Last.的NS-GAA设备中,短通道行为得到改善,寄生门电容减少.
- 与PTS相比,逆变器环振荡器测试显示,同等功率的运行速度增加了15.2%,同等功率的功耗减少了18.9%.
结论:
- 拟议的全BDI_Last方案提供了一个有效的解决方案,用于将全底介电隔离集成到NS-GAA晶体管中.
- 这种新的制造方法减轻了与S / D表层和应力工程相关的挑战,从而带来了卓越的设备性能.
- 完整的BDI_Last方案为增强NS-GAA设备的特性提供了一条途径,有利于高级集成电路的性能.
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