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Updated: Jul 25, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

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Published on: October 23, 2018

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模拟优化AlGaN/GaN SBD与场板结构和内置阳极的模拟优化

Tao Xu1, Ziqi Tang2, Ziyou Zhou1

  • 1Key Laboratory of New Processing Technology for Nonferrous Metals and Materials of Ministry of Education, School of Materials Science and Engineering, Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Guilin 541004, China.

Micromachines
|June 28, 2023
PubMed
概括

优化的AlGaN/GaN Schottky屏障二极管 (SBD) 使用深陷阳极和场板显著提高前向电流和故障电压. 这些改进为先进的应用带来了优越的电性能.

关键词:
在AlGaN/GaN SBDD中使用.在 FOM FOM FOM 中.这是一个TCAD模拟.球场板板板板板板板板板板板板板板板板板板板板板板板板入的阳极是深陷的.

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