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Updated: Jul 25, 2025

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由反场效应晶体管组成的1T DRAM阵列的干扰特性

Juhee Jeon¹, Kyoungah Cho¹, Sangsig Kim¹

¹Department of Electrical Engineering, Korea University, 145 Anam-ro, Seoul 02841, Republic of Korea.

|June 28, 2023

概括

这项研究引入了一种新的单晶体管动态随机访问存储器 (1T DRAM),使用反场效应晶体管 (FBFET). 基于FBFET的1T DRAM证明了可靠的阵列操作,并解决了内存设备中关键的缩放挑战.

科学领域:

半导体设备物理学半导体设备物理
材料科学是一种材料科学.
固态电子产品的固态电子

背景情况:

传统的动态随机存取存储器 (DRAM) 的缩放限制阻碍了高密度和高性能存储器的发展.
反场效应晶体管 (FBFET) 提供了一个有前途的无电容,一晶体管 (1T) 存储器解决方案,以克服这些扩展挑战.

研究的目的:

提出和研究一种使用p+n-p-n+纳米线FBFET的新1T DRAM架构.
为了评估在3x3阵列结构中提出的基于FBFET的1T DRAM的内存操作,可靠性和干扰效应.

主要方法:

使用混合模式模拟来分析内存操作和数组行为.
关键性能指标的表征,包括写入速度,感知边缘,保留时间和能源消耗.
评估细胞可靠性,非破坏性读取能力,并在小数组内写入干扰.

主要成果:

拟议的1T DRAM实现了2.5 ns的快速写入速度和90 μA/μm的显著感知边缘.
证明保留时间大约为1秒,能耗低 (5.0 × 10−15 J/bit用于写入"1").
展示了可靠的3x3阵列操作,非破坏性读取特性,并且没有写入干扰,表明大规模阵列的可行性.

结论:

基于FBFET的1T DRAM成功地解决了DRAM扩展挑战,其无电容1T结构.
拟议的设备展示了出色的性能指标和可靠的阵列操作,为下一代内存技术铺平了道路.
该研究证实了FBFETs在高密度,高性能内存应用中具有纳秒访问时间的可行性.

关键词:

回应场效应晶体管的反效应.记忆阵列是一个存储阵列.一个晶体管的动态随机访问存储器.积极反机制的积极反机制.纳米线的使用方法

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