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具有高分解电压和低特异性开电阻的GaN/Si异质连接VDMOS
Xin Yang1, Baoxing Duan1, Yintang Yang1
1Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi'an 710071, China.
Micromachines
|June 28, 2023
概括
一个新的化/ (GaN/Si) 垂直双扩散金属氧化物半导体 (VDMOS) 晶体管增强了故障电压并降低了电阻. 这种GaN/Si VDMOS使用断裂点转移 (BPT) 来提高比传统VDMOS的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 电气工程 电气工程
背景情况:
- 传统的垂直双扩散金属氧化物半导体 (Si VDMOS) 晶体管在故障电压 (BV) 和特定电阻 (R) 上面临限制.
- 同时优化BV和R对于先进的功率电子应用至关重要.
研究的目的:
- 为提高性能提出和研究一种新的GaN/Si异质连接VDMOS (GaN/Si VDMOS).
- 使用故障点转移 (BPT) 技术优化故障电压 (BV) 和特定电阻 (R).
主要方法:
- 利用 TCAD 模拟来建模和分析拟的 GaN/Si VDMOS 结构.
- 使用故障点转移 (BPT) 方法来转移电场分布.
- 研究了GaN/Si异质连接的界面状态效应.
主要成果:
- 拟议的GaN/Si VDMOS与传统Si VDMOS (20微米漂移区域) 相比,BV从374V显著增加到2029V.
- 具体的电阻 (R) 降至17.2 mΩ·cm2,低于传统Si VDMOS的36.5 mΩ·cm2.
- BPT成功地将分解点从高电场区域转移到低电场区域.
结论:
- 与传统的Si VDMOS相比,新的GaN/Si VDMOS提供了优越的断裂电压和较低的电阻.
- BPT技术有效地优化了GaN/Si VDMOS的性能.
- 了解GaN/Si界面效应是制造先进的异质连接 MOSFET 的关键.
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