,ESD

Boyang Ma1, Shupeng Chen1, Shulong Wang1

  • 1Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|June 28, 2023
PubMed
概括

这项研究引入了一种新型的电源电路,在快速启动事件中增强了对错误触发器的免疫力. 该电路使用独特的电容电压偏差MOSFET,以提供高效的静电放电 (ESD) 保护和显著的面积节省.

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