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在射频微系统中对TSV总电离剂量效应的建模和验证

Lihong Yang¹, Zhumeng Li¹, Guangbao Shan¹

¹School of Microelectronics, Xidian University, Xi'an 710071, China.

|June 28, 2023

概括

通过模拟和实验,研究了总电离剂量 (TID) 对射频 (RF) 透过通道 (TSV) 的影响. 辐射非线性地降低了TSV性能,验证了在恶劣环境中评估射频系统的方法.

科学领域:

电气工程电气工程
材料科学材料科学材料科学
辐射物理辐射物理

背景情况:

无线电频率 (RF) 系统在航空航天和核应用中至关重要.
透过电路 (TSV) 是现代射频系统中不可或缺的组成部分.
了解总电离剂量 (TID) 对TSV性能的影响对于可靠性至关重要.

研究的目的:

通过 (TSV) 结构来研究总电离剂量 (TID) 对透过的影响.
开发和验证一个模拟方法来评估在辐射下RF系统的性能.
为了分析TSV组件因辐射而导致的非线性降解.

主要方法:

一个1DTSV电容模型是使用COMSOL多物理用于TID冲击模拟开发的.
设计了三种类型的TSV组件,并进行了辐射实验.
在照射前和照射后测量S21参数,以量化性能降低.

主要成果:

模拟和实验结果显示,TSV性能下降的趋势一致.
随着照射剂量的增加,S21插入损失非线性增加 (0.2dB在30krad(Si),0.6dB在90krad(Si),0.8dB在150krad(Si)).
随着照射剂量增加,S21变异的速度下降.

结论:

该研究验证了一种准确的方法来评估在辐射下RF系统的性能.
TID显著影响TSV性能,影响射频系统和类似结构,如透电容器.
这些发现对于辐射暴露环境中的电子元件的设计和可靠性至关重要.

关键词:

这是一个S参数.固定的氧化物电荷是固定的.辐射实验的实验通过-通过 (TSV) 结构.总电离剂量 (TID) 的效应.

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