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Updated: Jul 25, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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AlGaN/GaN金属氧化物半导体高电子移动性晶体管与化TiO2作为被动和介电层

Yu-Shyan Lin1,2, Chi-Che Lu1

  • 1Department of Materials Science and Engineering, National Dong Hwa University, Hualien 974301, Taiwan.

Micromachines
|June 28, 2023
PubMed
概括

改进的氧化/氧化 (AlGaN/GaN) 金属氧化物半导体高电子流动性晶体管 (MOS-HEMT) 使用二氧化 (TiO2) 介电层. 火增强了设备的性能和稳定性在高温下.

关键词:
这里是AlGaNN.在 GaN GaN 中.在MOCVD中,MOCVD是最常见的.莫斯-赫姆特 (MOS-HEMT) 是一个TiO2 2 氧化的使用方法附录 附录 附录电介介介质的电压电路.消极化是一种被动化.基板是一种基板.

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