相关实验视频

Updated: Jul 25, 2025

Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator
08:39

Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator

Published on: January 28, 2019

9.9K

一个17.8-20.2 GHz紧向量-总相变换器在130纳米的SiGe BiCMOS技术为LEO网关接收器

Javier Del Pino1, Sunil L Khemchandani1, Mario San-Miguel-Montesdeoca2

  • 1Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria, 35017 Las Palmas de Gran Canaria, Spain.

Micromachines
|June 28, 2023
PubMed
概括

低地球轨道 (LEO) 卫星网关的新型紧向量调制器 (VM) 架构提供了改进的振幅和精确的6位相位控制. 这种新的设计提高了17.8-20.2 GHz范围内的相位阵列性能.

关键词:
这里是SIGE SIGE.阶段式数组数组是一个阶段式数组数组.矢量调制器 (VM) 是一个向量调制器.矢量和相位变换器 (VSPS) 是一个向量和相位变换器.

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Transmission of Multiple Signals through an Optical Fiber Using Wavefront Shaping

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The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry12:14

The Generation of Higher-order Laguerre-Gauss Optical Beams for High-precision Interferometry

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相关概念视频

Gain01:15

Gain

Gain and phase shift are properties of linear circuits that describe the effect a circuit has on a sinusoidal input voltage or current. The circuit's behavior that contains reactive elements will depend on the frequency of the input sinusoid. As a result, it is observed that the gain and phase shift will all be frequency functions.
Gain:
Suppose Vin is the input and Vout is the output signal to a circuit.
202
Thermal Sigmatropic Reactions: Overview01:16

Thermal Sigmatropic Reactions: Overview

Sigmatropic rearrangements are a class of pericyclic reactions in which a σ bond migrates from one part of a π system to another. These are intramolecular rearrangements where the total number of σ and π bonds remain unchanged.
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in...
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Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
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