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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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In the domain of radio communication, the significance of impedance matching must be considered. It is crucial to ensure the efficient transmission of signals between radio transmitters and receivers. Achieving this balance involves using impedance-matching circuits, with one fundamental configuration comprising a resistor, capacitor, and inductor.
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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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一个使用槽-波导结构的紧型极化MMI组合器.

Omer Brand1, Benjamin Wolftson1, Dror Malka1

  • 1Faculty of Engineering Holon, Institute of Technology (HIT), Holon 5810201, Israel.

Micromachines
|June 28, 2023
PubMed
概括

本研究介绍了一种用于光通信的紧型槽波导极化组合器. 它平衡了高速性能和能源效率,这对现代系统至关重要.

关键词:
在FV-BPM中.MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI,MMI组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器组合器两极分化是一种极化.插槽波导的波导.

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相关实验视频

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科学领域:

  • 光子学是指光子学的使用方法.
  • 集成光学 集成光学 集成光学
  • 光学通信设备 光学通信设备

背景情况:

  • 在光通信中,实现高速性能和能源效率至关重要.
  • 尽量减少电力消耗和环境影响是一个日益关注的问题.
  • 现有的解决方案在平衡速度和能源需求方面面临挑战.

研究的目的:

  • 设计一个紧的横向电 (TE) /横向磁 (TM) 极化多模干扰 (MMI) 组合器.
  • 为了提高性能,利用槽波导技术.
  • 为了提高光学发射器系统的能源效率.

主要方法:

  • 设计和模拟一个紧的MMI合器.
  • 槽波导技术的应用.
  • 使用全矢量光束传播方法 (FV-BPM) 和Matlab代码进行分析.

主要成果:

  • 一个极化组合器在TM和TE模式中有效运行.
  • 实现了10.94 dB (TE) 和13.08 dB (TM) 的灭绝比.
  • 证明了低插入损失 (TE为0.76dB,TM为0.56dB) 和C频段运行.

结论:

  • 拟议的装置为极化组合提供了一个紧而高效的解决方案.
  • 它在高速能力和能源效率之间提供了有利的平衡.
  • 该设备具有400 nm的MMI合器长度容忍度,适合光子集成电路.