在5G应用中对多赫蒂和超相MMIC GaN功率放大器进行比较分析
Victoria Díez-Acereda1, Sunil Lalchand Khemchandani1, Javier Del Pino1
1Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria (ULPGC), 35017 Las Palmas de Gran Canaria, Spain.
Micromachines
|June 28, 2023
概括
这项研究比较了多赫蒂功率放大器 (DPA) 和超相功率放大器 (OPA) 对于5G无线. OPA提供了更高的峰值效率,而DPA在输出回退时在线性和效率方面表现出色.
科学领域:
- 电气工程 电气工程
- 射频和微波工程 射频和微波工程
- 半导体设备 半导体设备
背景情况:
- 第五代 (5G) 无线通信需要高效和线性功率放大器.
- 多赫蒂功率放大器 (DPA) 和超相功率放大器 (OPA) 是5G系统的关键架构.
- 在上化 (GaN-on-Si) 技术为高频功率放大提供了优势.
研究的目的:
- 为了对5G应用中完全集成的多赫蒂和超相功率放大器的性能进行比较分析.
- 在各种操作条件下评估线性,效率和功率增加效率 (PAE).
- 为了评估两种放大器设计的面积效率.
主要方法:
- 对DPA和OPA配置进行理论分析和电路设计.
- 使用来自OMMIC 100nm GaN-on-Si技术 (D01GH) 的pHEMT晶体管进行集成.
- 在1dB的压缩点和7.5dB的输出回退 (OBO) 的比较性能评估.
主要成果:
- 在33dBm输出功率下,OPA达到58.3%的最大PAE;在35dBm输出功率下,DPA达到44.2%的PAE.
- 在7.5dB的OBO,DPA表现出优异的PAE (38.5%) 与OPA (26.1%) 相比.
- DPA表现出更高的线性,而OPA提供了更好的峰值效率. 优化的面积为3.26毫米2 (DPA) 和3.18毫米2 (OPA).
结论:
- 在DPA和OPA之间做出选择取决于5G应用程序对线性与峰值效率的特定要求.
- DPA和OPA都是使用GaN-on-Si技术进行5G功率放大的可行候选人.
- 区域优化技术成功地应用于两个集成电路设计.
更多相关视频
相关概念视频
Small-Signal Analysis of MOSFET Amplifiers
612
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
612
Small-Signal Analysis of BJT Amplifiers
1.2K
Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.
1.2K
MOSFET Amplifiers
186
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
186
Maximum Power Transfer
293
Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
By substituting the entire circuit with...
293
BJT Amplifiers
523
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
523
Biasing of FET
326
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
326


