一个基于RRAM的真随机数生成器,具有2T1R架构,用于硬件安全应用程序
Bo Peng1, Qiqiao Wu2, Zhongqiang Wang1
1Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Micromachines
|June 28, 2023
概括
本研究介绍了一种使用2T1R架构的基于抗性随机访问内存 (RRAM) 的真实随机数生成器 (TRNG). 这种设计通过提高源提取的准确性和抑制噪音来提高硬件安全性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 电阻随机存取存储器 (RRAM) 显示了内在的切换可变性,使其适合真正的随机数生成器 (TRNG).
- 在RRAM中高阻力状态 (HRS) 变化通常被用作TRNG的源.
- 由于制造工艺的小HRS变化可能导致基于RRAM的TRNG中的错误和噪声脆弱性.
研究的目的:
- 提出并验证基于RRAM的新型TRNG架构,以提高硬件安全性.
- 解决现有的RRAM TRNG中小HRS变化和噪声干扰的局限性.
- 使用RRAM技术提高随机数生成的可靠性和准确性.
主要方法:
- 为基于RRAM的TRNG实现2T1R架构.
- 使用高阻力状态 (HRS) 变化作为源.
- 使用28纳米CMOS工艺进行模拟和验证.
主要成果:
- 拟议的2T1R架构有效地区分HRS电阻值,精度为1.5kΩ.
- 在一定程度上纠正错误位,并抑制噪音.
- 基于RRAM的TRNG宏通过CMOS过程验证证明了硬件安全应用程序的潜力.
结论:
- 基于2T1R RRAM的TRNG为硬件安全应用提供了强大的解决方案.
- 该架构有效地减轻了与HRS变化和噪声相关的问题.
- 这种方法提高了安全系统真正随机数生成的可靠性.
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