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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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MOSFET: Depletion Mode01:20

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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一个具有批量电子积累效应的FIN-LDMOS.

Weizhong Chen1,2, Zubing Duan2, Hongsheng Zhang1

  • 1College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China.

Micromachines
|June 28, 2023
PubMed
概括

一个新的上绝缘器 (SOI) LDMOS晶体管通过使用FIN门和超连接沟门实现了超低的电阻,用于批量电子积累 (BEA). 这种设计显著降低了特定的电阻,并提高了超出极限的优点 (FOM) 数字.

关键词:
在BV和Ron,spsp.大量的电子积累 (BEA)扩展排水 (ED) 的情况延伸的超级连接沟大门

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科学领域:

  • 半导体设备物理学 半导体设备物理
  • 动力电子产品的动力电子.
  • 材料科学是一种材料科学.

背景情况:

  • 在绝缘体 (SOI) LDMOS晶体管对于电源应用至关重要.
  • 降低特定的启动阻力 (R_on,sp) 是提高设备性能的一个关键挑战.
  • 现有的设计在平衡故障电压和电阻方面存在局限性.

研究的目的:

  • 提出和研究一种具有超低R_on,sp.的新型薄 SOI LDMOS.
  • 通过使用 TCAD 模拟来探索增强性能背后的物理机制.
  • 为了达到超出常规极限的优点数字 (FOM).

主要方法:

  • 设备制造和特征 (暗示通过提案和调查).
  • 使用Sentaurus软件进行TCAD (技术计算机辅助设计) 模拟.
  • 在状态和状态之外的条件下对设备操作的分析.

主要成果:

  • 实施了FIN门和扩展超级连接沟门结构.
  • 大量电子积累 (BEA) 效应通过集成的二极管和门电位扩展实现.
  • 超低的R_on,sp为1.84mΩ·cm−2和314V的故障电压 (BV) 已被证明.
  • 高功率 (FOM) 的数字为53.49MW/cm2,超过了RESURF的限量.

结论:

  • 拟议的SOI LDMOS具有BEA效应,可以显著降低R_on,sp.
  • 该设备的设计克服了R_on,sp和漂移兴奋剂度之间的权衡.
  • 这项技术为突破现有的基于的动力设备的局限性提供了一条途径.