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Updated: Jul 25, 2025

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在GaN基设备中提高动态电阻,使用高质量的In Situ SiN被动化层

Jeong-Gil Kim1, Jun-Hyeok Lee2, Dong-Min Kang1

  • 1Terrestrial & Non-Terrestrial Integrated Telecommunications Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea.

Micromachines
|June 28, 2023
PubMed
概括

在现场化 (SiN) 的被动化增强了通常开启/关闭的AlGaN/GaN金属绝缘体半导体高电子流动性晶体管 (MISHEMT). 这种方法改善了直流特性,减少了动态电阻,并提高了先进电源设备的故障性能.

关键词:
它们是AlGaN/GaNN.麦希姆特 (MISHEMT) 是一个断裂电压的故障电压是什么动态在阻力上的动态.在现场 SiN SiN

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