模拟声波散射与应变效应对MoS2场效应晶体管电气性能的影响

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Updated: Jul 25, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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Huei Chaeng Chin1, Afiq Hamzah1, Nurul Ezaila Alias1

  • 1Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia.

Micromachines
|June 28, 2023
PubMed
概括

二硫化物 (MoS2) 晶体管由于声子散射而减少电流,随着温度的上升而恶化. 应变和高k介电材料可以提高性能,Al2O3和HfO2产生出色的下值摆动和开关比率.

关键词:
第十五章 没有了在MoS2 FET中,声学学术 声学学术 声学学术平均自由路径是什么意思这是一个光学模型.语音 语音 语音 语音压力 压力 压力 压力

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