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Updated: Jul 25, 2025

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翻转芯片包装的可靠性分析 加N芯片与纳米银接 BUMP

Lei Yan1, Peisheng Liu1, Pengpeng Xu1

  • 1Jiangsu Key Laboratory of ASIC Design, School of Information Science and Technology, Nantong University, Nantong 226019, China.

Micromachines
|June 28, 2023
PubMed
概括

化 (GaN) 电源设备的翻转芯片包装 (FCP) 显著降低了热应力. 纳米银突起与在突起金 (UBM) 提供了最可靠的热管理解决方案,用于GaN芯片.

关键词:
在 GaN 电源装置中,电源装置是 GaN 的.翻转芯片是什么意思接碰撞的碰撞接的碰撞热可靠性 热可靠性热应力是一种热应力.

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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