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三维集成的风扇外送晶圆级包 微碰撞电迁移研究

Wenchao Tian1,2, Ran Gao1, Lin Gu3

  • 1Hangzhou Institute of Technology, Xidian University, Hangzhou 311231, China.

Micromachines
|June 28, 2023
PubMed
概括

微凸点中的电迁移 (EM) 对半导体包装的可靠性至关重要. 高电流密度加快了EM失效,Sn63Pb37.2的临界值在4-4.5A/cm2之间. 温度显著影响故障时间.

关键词:
先进的包装,先进的包装.电迁移是一种电迁移.失败生命周期 生命周期的失败可靠性的可靠性

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科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 半导体物理 半导体物理

背景情况:

  • 先进的半导体包装依赖于多芯片垂直堆叠,以实现小型化和高性能.
  • 微碰撞中的电迁移 (EM) 是高密度互连中的主要可靠性问题.
  • 操作温度和电流密度是影响EM现象的关键因素.

研究的目的:

  • 调查微凸结构中负载条件和电迁移故障时间之间的关系.
  • 分析电热环境对高密度集成包装故障机制的影响.

主要方法:

  • 建立了一个相当于垂直堆叠的模型,用于扇出晶片级包装.
  • 利用电热相互作用理论进行数值模拟.
  • 应用了Sn63Pb37作为撞击材料的平均时间到故障 (MTTF) 方程.

主要成果:

  • 当前的聚合点最容易受到微凸结构中的EM故障的影响.
  • 温度升高显著加快EM失效时间,特别是在3.5A/cm2时.
  • 微凸破故障的临界电流密度在4A/cm2和4.5A/cm2之间.

结论:

  • 了解电热效应对于预测先进包装中的EM故障至关重要.
  • 电流密度和温度是决定微碰撞寿命的关键参数.
  • 该研究提供了可靠的微型撞击设计的关键电流密度值.