一个Ku频宽带堆叠的FET功率放大器使用0.15μm GaAs pHEMT
Jiaxuan Li1,2, Yang Yuan1,2, Bin Yuan1,2
1Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China.
Micromachines
|June 28, 2023
概括
本研究介绍了一种使用化 (GaAs) 高电子移动性晶体管 (HEMT) 技术的Ku-带宽带功率放大器 (PA). 该MMIC的峰值功率为30.8dBm,适用于宽带雷达系统.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
背景情况:
- 宽带雷达系统需要高性能功率放大器 (PA) 才能高效运行.
- 化 (GaAs) 高电子流动性晶体管 (HEMT) 技术为高频应用提供了优势.
研究的目的:
- 提出和设计一个Ku频宽带功率放大器 (PA) 微波单体集成电路 (MMIC).
- 为了利用堆叠的FET结构来提高宽带PA性能.
- 为了满足宽带雷达系统的苛刻应用要求.
主要方法:
- 理论推导,以说明堆叠FET结构在宽带PA设计中的优势.
- 实现双阶段放大器和双向功率合成结构.
- 使用0.15μm GaAs HEMT技术制造MMIC.
主要成果:
- 制造的PA在16GHz时达到30.8dBm的峰值输出功率.
- 在15至17.5GHz带宽中保持的输出功率高于30dBm.
- 在运行带宽范围内实现了超过32%的功率增加效率 (PAE).
- 证明了30%的3dB输出功率分数带宽.
结论:
- 拟议的Ku频宽带PA MMIC实际上满足了宽带雷达系统的要求.
- 堆叠的FET结构和两级设计有助于高增益和功率.
- 该GaAs HEMT技术在一个紧的芯片尺寸 (3.3 × 1.2 mm2) 中实现了高性能.
相关概念视频
MOSFET Amplifiers
186
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
186
Biasing of FET
326
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
326
Small-Signal Analysis of MOSFET Amplifiers
612
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
612
Cascaded Op Amps
678
Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
678
BJT Amplifiers
523
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
523
MOSFET: Enhancement Mode
391
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
391


