低能电子与2-三甲基酸相互作用,这是EUVL的潜在组成部分,可以抵抗材料
Reza Tafrishi1, Daniela Torres-Diaz2, Lionel Amiaud2
1Science Institute and Department of Chemistry, University of Iceland, Dunhagi 3, 107 Reykjavik, Iceland. odduring@hi.is.
Physical chemistry chemical physics : PCCP
|June 28, 2023
概括
研究人员研究了2 - 3 - 三甲基酸 (TFMAA) 的电子诱导碎片化,用于极紫外线光刻 (EUVL) 抵抗. TFMAA显示出显著的碎片化,主要是HF裂变,影响其作为抗性材料的潜力.
科学领域:
- 物理化学 物理化学
- 材料科学 材料科学 材料科学
- 表面科学是一门学科.
背景情况:
- 极端紫外线光刻 (EUVL) 正在转向芯片制造.
- 这就需要了解电阻材料的电子诱导化学.
- 化化合物正在探索加强EUV吸附和解离.
研究的目的:
- 调查低能电子诱导的二-三甲基酸 (TFMAA) 的碎片化.
- 评估TFMAA作为EUVL材料的组件的适用性.
- 通过离散电离 (DI) 和离散电子附着 (DEA) 阐明碎片化途径.
主要方法:
- 对TFMAA电子诱导碎片化的实验研究.
- 使用DFT和合集群方法进行碎片化值能量的理论计算.
- 分析碎片化通道和键裂解机制.
主要成果:
- 与DEA相比,TFMAA在DI中表现出更广泛的碎片化.
- 主要的DEA碎片化通道是HF与母分子的分裂.
- 两种DI和DEA途径都涉及显著的重组和新的键形成,主要与HF形成有关.
结论:
- TFMAA经历了大量的电子诱导碎片化,特别是高频消除.
- 观察到的碎片化模式提供了关于分子在EUV辐射下的行为的见解.
- 研究结果揭示了TFMAA在高级EUVL抵抗配方中的潜在功效和局限性.
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