Cu(S,I)

Fangjuan Geng1,2, Yu-Ning Wu1, Daniel Splith3

  • 1Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, and Department of Electronics, East China Normal University, Shanghai 200241, China.

概括

研究人员开发了一种新的无形铜 (硫,) 材料,在p型无形透明导体中实现了创纪录的高导电性. 这一突破为灵活的电子和光电子提供了一个有希望的替代方案.