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通过离子植入来实现GaN的改善晶体质量和增强光学性能,诱导了高质量的核化

Hongchang Tao, Shengrui Xu, Jincheng Zhang

|June 29, 2023

概括

在蓝宝石基板上进行离子植入预处理,通过减少位移,显著改善化 (GaN) 晶体质量. 这种方法提高了基于GaN的发光二极管 (LED) 的性能,并为电子设备提供了一个有前途的模板.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
表面科学是一门学科.

背景情况:

化 (GaN) 的异质-表轴生长受到高密度线程位移的阻碍,影响设备性能.
这些位移对推进基于GaN的电子和光电子设备构成重大挑战.

研究的目的:

研究 (Al) 离子植入预处理在蓝宝石基板上的有效性,以改善GaN晶体质量.
为了证明位抑制和增强核化,以实现高质量的GaN膜生长.
评估该技术对基于GaN的发光二极管 (LED) 性能的影响.

主要方法:

离子植入预处理在不同剂量的蓝宝石基板上进行.
化 (GaN) 薄膜在这些预处理基板上生长.
使用X射线摇摆曲线,原子力显微镜 (AFM) 和传输电子显微镜 (TEM) 来进行材料表征.
制造了基于GaN的发光二极管 (LED),并分析了它们的电特性.

主要成果:

10^13 cm^-2的Al-ion剂量减少了GaN (002) / 102) X射线摇摆曲线的半最大 (FWHM) 的全宽度,从204.7/340.9弧秒减少到187.0/259.5弧秒.
AFM分析证实了通过离子植入诱导的高质量核化,从而改善了GaN晶体质量.
经过TEM测量,证实了显著的位抑制.
在Al-ion植入基板上制造的LED显示,在20 mA时,墙塞效率从30.7%增加到37.4%.

结论:

离子植入预处理是一种有效的技术,可以在蓝宝石基板上促进高质量的GaN生长.
这种方法显著减少了位移,并增强了核化,从而提高了晶体质量.
改进的GaN模板显示了制造高性能LED和其他电子设备的前景.

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