对III/V-on-bulk-Si DFB LD的相位转移优化,以实现单模稳定性
Optics express
|June 29, 2023
概括
这项研究介绍了一种新的III/V-on-Bulk-Si分布式反 (DFB) 激光. 优化的相位转移设计显著提高了稳定的单模式运行,优于传统设计.
科学领域:
- 半导体激光器 半导体激光器
- 综合光子学 综合光子学
- 材料科学是一种材料科学.
背景情况:
- 分布反 (DFB) 激光器对于光通信至关重要.
- 在高电流下实现稳定的单模式运行仍然是一个挑战.
- III/V-on-Bulk-Si技术为将激光集成到平台上提供了一条途径.
研究的目的:
- 提供一个III/V-on-Bulk-Si DFB激光器,具有优化的长相位移部分.
- 为了显著增强稳定的单模式运行.
- 为了比较其性能与传统的DFB激光器.
主要方法:
- 一个III/V-on-Bulk-Si DFB激光器的设计和制造.
- 优化相位移段长度和子波长尺度调整.
- 分析单模稳定性高达20倍的门电流.
- 基于侧模式抑制比率 (SMSR) 的收益率分析.
主要成果:
- 稳定的单模式运行实现了高达20倍的门电流.
- 通过优化相位移,最大限度地提高了基本和高级模式之间的增强差异.
- 与传统的λ/4相位移设计相比,长相位移DFB激光的性能优越.
- 证明了增强模式稳定性.
结论:
- 优化的长相转移部分在III/V-on-Bulk-Si DFB激光器中有效地实现了优越的单模式稳定性.
- 这种设计在传统的DFB激光结构上提供了显著的改进.
- 这些发现为更强大,更可靠的集成光子设备铺平了道路.
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