谷物内铁电转换在5nm以下的薄Al0.74Sc0.26N片在1V的情况下

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Updated: Jul 25, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Georg Schönweger1,2, Niklas Wolff3,4, Md Redwanul Islam3

  • 1Department of Electrical and Information Engineering, Kiel University, Kaiserstrasse 2, D-24143, Kiel, Germany.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|June 29, 2023
PubMed
概括

在5nm以下的和化薄膜中的铁电开关实现了创纪录的低1V开关电压. 氏体类型铁电的这一突破为高度可扩展的神经形态计算设备铺平了道路.

关键词:
域名 域名 域名铁电器 铁电器 铁电器神经形态计算是一种神经形态计算.斯堪迪是一种.薄膜是一种薄膜.

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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