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施托基屏障高度工程在MoS₂场效应晶体管上使用接触电极上的聚合物表面修饰器

Dongwon Choi^1,2, Jeehoon Jeon¹, Tae-Eon Park¹

¹Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea.

|June 29, 2023

概括

研究人员通过用聚乙胺 (PEI) 修改黄金接触器来降低二硫化 (MoS) 场效应晶体管 (FET) 中的肖特基屏障高度. 这种简单的方法提高了电子和光电子的2D材料设备性能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

二维 (2D) 材料,特别是像MoS这样的过渡金属二甲基化物 (TMDC),为先进的电子提供了卓越的半导体性能.
金属半导体接口上的Schottky障碍阻碍了基于TMDC的设备的性能,限制了它们的应用潜力.
减轻Schottky障碍的现有方法通常涉及复杂的工艺或专门的材料.

研究的目的:

研究一种简单的方法来降低MoS₂场效应晶体管 (FET) 中的舒特基屏障高度.
探索使用聚乙烯胺 (PEI) 作为表面修饰剂来调整金属接触器的工作功能.
为了证明PEI在提高电子和光电子应用中的MoS₂FET性能方面的有效性.

主要方法:

合成的MoS₂场效应晶体管 (FET) 与黄金 (Au) 接触.
将聚乙烯胺 (PEI) 的薄涂层涂在Au接触面上,以改变其工作功能.
在PEI处理之前和之后描述了MoS₂FET的电特性,以评估Schottky屏障高度的减少.

主要成果:

聚乙烯胺 (PEI) 有效地降低了黄金 (Au) 接触电极的工作功能.
该PEI表面修改显著降低了在MoS₂/Au接口上的Schottky屏障高度.
与未经处理的设备相比,经过处理的MoS₂FET显示出更好的电性能.

结论:

使用PEI进行表面修饰是一种快速,简单和有效的策略,用于降低MoS₂FET中的Schottky屏障高度.
这种方法为提高基于二维材料的电子和光电子设备的性能提供了一个有希望的途径.
该方法在环境条件下易于实施,使其适用于大面积的电子制造.

关键词:

在MoS2 FET中,光电效应是一种光电效应.聚乙烯胺的使用方法斯科特基屏障的高度是热电辐射排放的热电辐射排放

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