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一个补充的低施托基屏障S/D基的纳米级无兴奋剂双向可重新配置的场效应晶体管,具有改进的前向电流

Xiaoshi Jin¹, Shouqiang Zhang², Chunrong Zhao²

¹School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China. xsjin@live.cn.

|June 29, 2023

概括

一种新的纳米级无兴奋剂双向RFET (BRFET) 使用互补的低舒特基屏障 (CLSB) 进行增强的载体注入. 与传统的BRFET相比,这种设计可以实现更大的前向电流.

科学领域:

半导体设备物理半导体设备物理
纳米技术纳米技术
材料科学材料科学材料科学

背景情况:

传统的双向场效应晶体管 (BRFET) 通常依赖于兴奋剂和带对带道化来产生载体.
在纳米级设备中实现高性能需要高效的载体注入机制.
肖特基屏障在控制金属半导体接口的电流流量方面发挥着至关重要的作用.

研究的目的:

提出和研究一种新的纳米级无兴奋剂双向RFET (BRFET).
为了提高设备性能,引入一个补充的低斯科特基障碍 (CLSB) 概念.
分析拟议的CLSB-BRFET的工作原理和性能特征.

主要方法:

使用设备模拟来研究CLSB-BRFET的性能.
拟议的设备与传统的BRFET相比较.
能量带理论被用来解释设备的工作原理.

主要成果:

拟议的CLSB-BRFET采用两种不同的金属来创建独特的Schottky屏障.
形成一个补充的低舒特基屏障 (CLSB),通过热电辐射促进载体注入.
与传统的BRFET相比,CLSB-BRFET显示出更大的前向电流.
设备模拟证实了增强的输出特性和可重新配置的功能.

结论:

通过实现高效的载体注入,CLSB-BRFET为传统的BRFET提供了一个有前途的替代方案.
无兴奋剂操作和增强电流驱动是拟议的设备架构的关键优势.
该CLSB概念为开发高性能纳米级晶体管提供了一条途径.

关键词:

场效应晶体管的领域效应晶体管.前向电流的前向电流是什么?可重新配置的可重新配置.斯科特基屏障的高度是

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