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Updated: Jul 25, 2025

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使用三重金属门的门周围InAs-Si垂直TFET的切换性能评估,一个模拟研究

Dariush Madadi¹, Saeed Mohammadi²

¹Department of Engineering Sciences, Faculty of Technology and Engineering, Semnan University, Semnan, Iran. Madadi@semnan.ac.ir.

|June 29, 2023

概括

这项研究引入了一种新的门全方位InAs-Si垂直道场效应晶体管 (VTG-TFET) 与三重金属门. 该设计实现了卓越的交换性能,使其成为低功耗数字应用的理想选择.

科学领域:

半导体设备物理学半导体设备物理
材料科学用于电子产品.
通过先进的晶体管技术,实现了先进的晶体管技术.

背景情况:

道场效应晶体管 (TFET) 提供了低功耗运行的潜力.
在TFET中实现的下值斜率和高的开启/关闭比率仍然是一个挑战.
在先进的半导体设备中,InAs和Si的集成至关重要.

研究的目的:

介绍一款具有三重金属门的新型门周围InAs-Si垂直道场效应晶体管 (VTG-TFET).
研究改进的静电控制和狭窄带隙源对开关特性的影响.
分析氧化物和金属加工功能的对设备性能的影响.

主要方法:

一个门周围的InAs-Si VTG-TFET的制造和特征.
使用与实验数据校准的数值设备模拟器.
分析晶体管性能指标,包括当前,非当前,开/关比率和子值斜率.

主要成果:

拟议的VTG-TFET具有出色的切换特性.
实现了392μA/μm的开通电流 (I_on) 和8.8 × 10-17 A/μm的关闭电流 (I_off).
证明了高的I_on/I_off比率为~4.4 × 10¹²,并且最小的下值斜率为9.3 mV/dec.

结论:

三重金属门设计增强了静电控制,提高了TFET性能.
InAs-Si VTG-TFET是快速切换,低功耗数字应用的有希望的候选者.
进一步的分析证实了通过模拟门工作功能和氧化物效应来证明设备的潜力.

关键词:

门 - - 围绕着所有的门.在AsSi的异质连接中.下值斜率的斜率是什么意思三重的金属门,三重的金属门.垂直TFET可以使用.

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