在无形有机半导体中对孔运输的动态影响:一个联合QM/MM和kMC研究
Ali Deniz Özdemir1, Samaneh Inanlou2, Franz Symalla3
1Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.
Journal of chemical theory and computation
|June 29, 2023
概括
结构性障碍对有机半导体 (OSC) 中的电荷运输有重大影响. 动态障碍导致洞的移动性发生数量级变化,这对有机电子性能至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 计算化学计算化学
- 有机电子 有机电子
背景情况:
- 无形有机半导体 (OSC) 是有机光伏和OLED的关键.
- 电荷载体的移动性是OSC的关键性能限制因素.
- 了解结构性疾病对流动性的影响对于物质发展至关重要.
研究的目的:
- 研究结构性障碍如何影响无形OSC中的电荷转移参数和移动性.
- 开发和应用一个用于采样静态和动态障碍的计算策略.
- 阐明分子包装,电子性质和电荷传输之间的关系.
主要方法:
- 量子力学/分子力学 (QM/MM) 与半实证的哈密尔顿.
- 广泛的分子动力学 (MD) 采样以捕捉动态障碍.
- 动力蒙特卡罗 (KMC) 模拟用于移动计算.
主要成果:
- 结构性障碍显著改变了HOMO能量分布和分子间合.
- 动态障碍可以导致相同材料计算的孔移动性的数量级差异.
- 该研究提供了一种采样失调和分析电荷转移时间尺度的方法.
结论:
- 无形矩阵的波动对OSC中的电荷载体运输有着深刻的影响.
- 为了预测OSC性能,需要对静态和动态障碍进行准确的建模.
- 这项工作有助于通过理解障碍效应来设计更好的有机电子材料.
相关概念视频
Carrier Transport
478
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
478
π Electron Effects on Chemical Shift: Overview
1.1K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.1K
Fermi Level Dynamics
290
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
290
Metal-Semiconductor Junctions
395
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
395
π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds
1.2K
In aromatic compounds, such as benzene, the circulation of (4n + 2) π-electrons sets up a diamagnetic or diatropic ring current around the perimeter of the molecule. This current induces a magnetic field that opposes the external field inside the ring and reinforces it on the outside. The protons in benzene are deshielded and exhibit high chemical shifts in the range 6.5–8.5 ppm. The shielding effect at the center of the ring is evident in complex aromatic molecules, such as...
1.2K
Types of Semiconductors
669
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
669


