概括
本研究介绍了一种新型的化辅助边缘合器,用于酸光子集成电路. 它实现了低光纤芯片合损失,增强了LNOI技术的实际应用.
科学领域:
- 光子学 是一个光子学.
- 材料科学 材料科学 材料科学
- 光学工程是指光学工程.
背景情况:
- 在绝缘器上酸 (LNOI) 是先进光子集成电路 (PIC) 的关键平台.
- 实现低损耗光纤芯片合对于在光通信和其他领域实际实施LNOI PIC至关重要.
- 现有的合方法在效率和整合方面面临挑战.
研究的目的:
- 为LNOI提出和演示一种新型的化 (SiN) 辅助三层边缘合器.
- 为了减少基于LNOI的PIC中的光纤芯片合损失.
- 通过提高合效率来提高LNOI设备的实用性.
主要方法:
- 一个三层边缘合器的设计,包括一个双层尼酸盐 (LN) 和一个层间合结构.
- 在合器内集成80纳米厚的SiN波导与LN条波导.
- 对1550 nm的TE模式的光纤芯片合损失的实验性表征.
主要成果:
- 在1550 nm的TE模式下显示了0.75 dB/facet的低光纤芯片合损失.
- 在SiN和LN波导之间测量了大约0.15dB的过渡损失.
- 在三层边缘合器设计中确认了SiN波导的高制造容忍度.
结论:
- SiN辅助的三层边缘合器有效地减少了LNOI平台的合损失.
- 这一进步对于LNOI在光通信和微波光子学中的实际应用至关重要.
- 该设计提供了一个强大的解决方案,具有高的制造容忍度,为更高效的LNOI设备铺平了道路.
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