质子化有机半导体:水诱导电荷陷生成的起源
Sangsik Park1, Wookjin Choi1, Seung Hyun Kim1
1Department of Chemical Engineering, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea.
Advanced materials (Deerfield Beach, Fla.)
|June 30, 2023
概括
水可以在有机场效应晶体管 (OFET) 中引起不稳定性,通过直接质子化有机半导体,形成陷. 这种由质子诱导的陷生成是OFET操作不稳定的关键因素.
科学领域:
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
- 半导体物理 半导体物理
背景情况:
- 有机场效应晶体管 (OFET) 显示出前景,但运行稳定性较低.
- 已知水在OFET不稳定性中的作用,但水诱导陷生成的确切机制尚不清楚.
- 现有的研究通常集中在绝缘体表面的陷生成上.
研究的目的:
- 提出并研究质子诱导陷生成作为OFET运行不稳定的主要机制.
- 阐明水与半导体直接相互作用在设备操作过程中造成陷的作用.
- 评估这种机制在不同有机半导体材料中的普遍性.
主要方法:
- 使用光谱和电子调查技术.
- 采用计算模拟来模拟陷生成机制.
- 检查了带隙小的聚合物与化硫环.
主要成果:
- 证明在运行过程中水对有机半导体的直接质子化会产生陷.
- 证实这种陷生成机制独立于绝缘体表面的陷生成.
- 在各种小带隙聚合物中观察到这种现象,无论晶体结构如何,这表明它具有广泛的适用性.
结论:
- 水产生的质子诱导陷是导致OFET运行不稳定的重要因素.
- 这种机制提供了对有机半导体偏向应力效应的新理解.
- 识别这种陷生成过程为设计更稳定的有机电子设备打开了道路.
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