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Updated: Jul 24, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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在HfO基于模拟内存与薄SiO屏障层之间的逐渐设置和开/关比之间的权衡

Fabia F Athena1, Matthew P West2, Jinho Hah2

  • 1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

ACS applied electronic materials
|July 3, 2023
PubMed
概括

将屏障层添加到基于HfO2的突触器件中,可以在设置操作期间改善阻力控制. 然而,这种修改导致开/关比降低,影响模拟内存应用程序.

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