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Updated: Jul 24, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

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由石墨烯表面等离子体极光子驱动的三体辐射二极管的性能改进

Ming-Jian He1,2, Xue Guo1,2, Hong Qi1,2

  • 1School of Energy Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China. qihong@hit.edu.cn.

Physical chemistry chemical physics : PCCP
|July 4, 2023
PubMed
概括

石墨烯通过光子道化实现高效的定向热传输来增强辐射热二极管. 这一突破显著提高了整流性能,为先进的热管理和通信技术铺平了道路.

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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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