在FeSe/SrTiO3中,上临界场的异质性和接口超导性由PLD培养
Tomoki Kobayashi1, Hiroki Nakagawa1, Hiroki Ogawa1
1Department of Basic Science, University of Tokyo, Meguro 153-8902, Tokyo, Japan.
概括
在酸 (SrTiO3) 基板上的超薄铁化 (FeSe) 薄膜显示仅限于接口的超导性. 从基板转移电子会影响这些新型超导材料的磁传输特性.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 超导电性 超导电性 超导电性
背景情况:
- 超薄超导膜对于下一代电子设备至关重要.
- 众所周知,FeSe和SrTiO3之间的接口具有独特的电子特性.
研究的目的:
- 为了研究脉冲激光沉积在SrTiO3.3上的FeSe薄膜的磁传输特性.
- 确定这些异构结构中超导的性质和位置.
主要方法:
- 脉冲激光沉积 (PLD) 用于生长FeSe薄膜,厚度从4nm到19nm.
- 进行了磁传输测量,以分析超导行为.
主要成果:
- 最薄的薄膜 (4纳米) 显示负霍尔效应,表明电子从SrTiO3转移到FeSe.
- 在过渡温度附近的上临界场中观察到很大的异构性 (γ>11.9).
- 发现垂直于薄膜平面的连贯度长度小于FeSe c轴长度,并且独立于薄膜厚度.
结论:
- 在FeSe/SrTiO3薄膜中的超导性主要局限于接口.
- 观察到的现象与界面电子转移和近距离效应一致.
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