无电场旋转轨道扭矩切换,辅助于超薄的平面内非传统的旋转扭矩[Pt/Co]N
Fen Xue1, Shy-Jay Lin2, Mingyuan Song2
1Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA. fenx@stanford.edu.
Nature communications
|July 4, 2023
概括
使用非传统的旋转轨道扭矩 (SOT) 实现了磁性内存的无磁场切换. 这项研究证明了在多层[Pt/Co]中高效的平面SOT切换,使低能耗,高密度的自旋电子设备成为可能.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 先进的非挥发性磁性存储器需要在没有外部磁场的情况下对磁化进行电气操纵.
- 已经证明了有效的外平面旋转轨道扭矩 (SOT) 对于无场切换.
- 在下一代内存设备中,飞机内无现场开关机制的开发至关重要.
研究的目的:
- 为了研究类型-x旋转轨道扭矩配置用于无场切换.
- 为了探索 [Pt/Co] 多层中的非传统的旋转偏振.
- 为了证明高效的电气操纵磁化用于spintronic应用.
主要方法:
- 在MgO和SiO基板上制造喷涂超薄的多层[Pt/Co]N.
- 测量X射线磁圆二元化 (XMCD) 测量探测轨道磁时刻.
- 微磁模拟用于评估切换电流效率.
主要成果:
- 在[Pt/Co]N膜中观察到重要的平面非传统旋转极化.
- X射线磁圆二重体证实了强大的轨道磁矩,有助于旋转电流.
- 实现了高旋转扭矩效率 (高达-0.083),使CoFeB磁化能够在没有电场的情况下切换.
- 微磁模拟显示,与y型切换相比,切换电流较低,特别是在狭窄脉冲的情况下.
结论:
- 本文介绍了一种可行的x型旋转轨道扭矩配置,用于无现场切换.
- 这些发现突出了轨道磁矩在产生非常规自旋电流中的作用.
- 该研究为开发高速,高密度和低能耗的自旋电子记忆器件提供了新的途径.
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