空气稳定的半导体中的轴依赖导电极性,PdSe2
Ryan A Nelson1, Ziling Deng2, Andrew M Ochs1
1Dept of Chemistry and Biochemistry, The Ohio State University, 100 W. 18th Ave., Columbus, OH 43210, USA. goldberger.4@osu.edu.
Materials horizons
|July 5, 2023
概括
这项研究表明,二化 (PdSe2) 是一种稳定的半导体,具有轴依赖导电极性 (ADCP). 这种独特的电子特性使得电荷载体可以根据方向不同地移动,从而开辟了新的技术可能性.
科学领域:
- 固态物理 固态物理
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 轴依赖导电极性 (ADCP) 是一种罕见的电子现象,其中电荷载体类型 (p型或n型) 随着晶体方向而变化.
- 大多数已知的ADCP材料都是金属,很少有半导体表现出这种效应,限制了其实际应用.
研究的目的:
- 确定二化 (PdSe2) 是一种表现出ADCP的稳定半导体.
- 为了研究ADCP在化PdSe2晶体中的运输特性和潜在机制.
主要方法:
- 化 (p型) 和化 (n型) PdSe2晶体的生长和特征.
- 测量各种温度范围和兴奋剂水平的传输特性,包括导电性和热功率.
- 密度函数理论 (DFT) 计算以阐明ADCP的起源.
主要成果:
- 稳定的半导体PdSe2用电子合样本展示了ADCP,显示了p型传导横平面和n型传导在100-200K以上的平面内.
- P-doped PdSe2 呈现出温度依赖的热力,在平面内热力变为负值以上~360 K.
- DFT计算证实了价值带和导电带的有效质量异质性驱动了PdSe2.2中的ADCP.
结论:
- PdSe2是实现ADCP的有希望的稳定半导体材料.
- 在PdSe2中观察到的ADCP源于固有的带结构特性,使方向电荷传输成为可能.
- 这一发现为利用定向电荷迁移的新型电子设备和技术开辟了道路.
相关概念视频
Biasing of Metal-Semiconductor Junctions
284
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
284
P-N junction
589
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
589
Biasing of P-N Junction
616
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
616
Types of Semiconductors
667
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
667
Induced Electric Dipoles
4.3K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.3K
Metal-Semiconductor Junctions
395
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
395


