极端价值理论应用于卫星微电子中的太空辐射损害评估
P W Marshall1, C J Dale2, E A Burke3
1Naval Research Laboratory, Washington, DC 20375 and SFA, Inc., Landover, MD 20785.
概括
这项研究模拟了中质子诱导的位移损伤,揭示了核反应如何影响成像阵列. 极端值统计准确地预测损坏极端,并识别高暗电流像素,这对太空电子非常重要.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 辐射的影响 辐射效应
背景情况:
- 质子辐射对 (Si) 成像阵列构成重大威胁,特别是在太空环境中.
- 了解移位损伤能量分布对于预测设备性能下降至关重要.
- 损伤的像素对像素差异可能来自各种辐射相互作用机制.
研究的目的:
- 以质子流动和微体积大小的函数来建模中质子诱导的位移损伤的概率.
- 将模型预测与Si成像阵列中测量的泄漏电流进行比较.
- 应用极端值统计 (EVS) 来量化损坏极端,并识别异常的像素行为 (尖峰).
主要方法:
- 计算出的第一个和第二个移位损伤时刻为10 MeV至300 MeV的质子能量能量分布.
- 开发了一个模型,将损伤概率与质子流动和敏感的微体积大小联系起来.
- 使用极端值统计 (EVS) 来分析损坏极端和暗电流峰值.
主要成果:
- 该模型准确地描述了基于质子流动和微体积的损伤概率.
- 核反应反弹的波松分布解释了在长时间的质子暴露下,Si成像阵列中的像素对像素损伤差异.
- EVS 显示出与测量损坏极端的良好一致性,并确定了不同图像设计中的高暗电流像素 ("尖峰") 的独特机制.
结论:
- 中的质子诱导的位移损伤通过开发的模型和EVS得到了很好的描述.
- 核反应效应显著影响成像阵列中的损伤差异,影响长期可靠性.
- EVS是一个强大的工具,用于预测辐射引起的故障,并了解敏感电子设备中的异常像素行为.
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