在立方化/铜接口上使用热边界导电量测量界面结合,这些界面在状态的声子密度中存在很大的不匹配
Naiqi Chen1, Kunming Yang2, Ziyang Wang3
1State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
ACS applied materials & interfaces
|July 5, 2023
概括
非破坏性时间域热反射率 (TDTR) 量化金属/非金属复合材料的界面粘合. 更强的结合可以通过改善极端环境中至关重要的声子传输来增强热边界导电性 (G).
科学领域:
- 材料科学 材料科学 材料科学
- 热物理 热物理
- 纳米技术 纳米技术
背景情况:
- 破坏性方法,如划痕测试,是评估金属/非金属复合材料接口粘合的常见方法.
- 这些方法不适合极端环境,需要非破坏性量化技术.
研究的目的:
- 应用时间域热反射率 (TDTR) 进行金属/非金属复合材料界面粘合的非破坏性量化.
- 研究界面粘合,界面特性和热边界导电性 (G) 之间的关系.
主要方法:
- 利用时间域热反射率 (TDTR) 来测量热边界导电率 (G).
- 对立方化/铜 (c-BN/Cu) 接口 ((100) 和 (111) 方向) 进行了实验和模拟研究.
- 分析了接口声传输和声密度状态 (PDOS) 的不匹配.
主要成果:
- TDTR成功测量了c-BN/Cu接口的G.
- (100) c-BN/Cu接口显示的G (30MW/m2·K) 比 (111) 接口 (25MW/m2·K) 高20%左右,这与更强的结合和更好的声子传输有关.
- 对于具有较大的PDOS不匹配的接口,观察到结合和G之间的正相关性,而对于较小的PDOS不匹配,则发现负相关性.
结论:
- 接口声波传输能力对于接口热传输至关重要,特别是在显著的PDOS不匹配的情况下.
- TDTR提供了一种可行的非破坏性方法来量化界面结合及其对热性质的影响.
- 了解这些关系是设计高性能复合材料的关键,用于苛刻的应用.
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