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对于集成光子学而言,可逆热驱动阶段变化层在₂Se₃

Jianghong Wu^1,2, Yuting Ye^1,2, Jialing Jian^1,2

¹Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China.

|July 5, 2023

概括

双维的化 (In2Se3) 显示了光子设备的可逆相位过渡. 这种材料显示了集成光子学和非挥发性光学内存的潜力.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

二维的二化物 (In2Se3) 以其多态相变和在电子设备中的使用而闻名.
在In2Se3中用于光子应用的可逆热驱动相变的探索仍然在很大程度上未被绘制.
了解这些转变是解锁光电子中的新功能的关键.

研究的目的:

在二维In2Se3.3.中研究热驱动的可逆相变.
探索这些相位转换在集成光子设备中的潜力.
为了证明In2Se3在热光学调制和光学内存中的应用.

主要方法:

使用纹和波纹的表面应变观察相变 (α和β'阶段,以及β阶段家族内).
折射率和光电子特性变化的表征.
制造和测试多层β'-In2Se3作为用于热光学调制的透明微热器.

主要成果:

热驱动的α和β'阶段之间的可逆相过渡被成功观察到,受局部应变的影响.
还确定了β相家族内的可逆相变.
在电信频段实现了折射率的显著变化,光学损失最小,这对于集成光子学至关重要.
多层β'-In2Se3显示出高效的热光学调制能力.

结论:

二维In2Se3显示了光子应用的可逆相位过渡行为.
该材料通过热刺激的光电子特性调制为集成光子电路提供了潜力,包括制造后修剪.
层状In2Se3作为有效的透明微热器,使热光学调制成为可能,并为多层,非挥发性光学内存铺平了道路.

关键词:

在2Se3Se3中.微型加热器微型加热器光学相变材料的光学相变材料.阶段变速器阶段变速器可逆的相位过渡的相位过渡.

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