在间层交换中切换无场旋转轨道扭矩,并配Co/Ta/CoTb
Chuangwen Wu1, Xiangqing Zhou1, Guang Zeng1
1Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, People's Republic of China.
这项研究介绍了一种新的T型自旋轨道扭矩装置用于自旋电子内存. 它展示了确定性磁化切换和多态突触可塑性,为神经形态计算应用铺平了道路.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 旋转轨道扭矩 (SOT) 设备对于先进的内存和计算至关重要.
- 无场SOT开关对于节能型自旋电子设备至关重要.
- T型磁性配置为设备应用提供了独特的特性.
研究的目的:
- 为了研究一个T型无电场旋转轨道扭矩装置,与合的内平面和垂直磁层.
- 探索电流诱导的磁化切换和域壁运动.
- 为了展示该设备在旋转记忆和神经形态计算方面的潜力.
主要方法:
- 使用非磁性Ta间距器制造一个Co/Ta/CoTb异构结构.
- 介层交换合 (IEC) 的特征及其对磁化的影响.
- 磁光克尔效应 (MOKE) 测量用于域壁运动分析.
- 对异常的霍尔电阻进行研究,以证明突触可塑性.
主要成果:
- 垂直CoTb层的决定性电流诱导磁化切换是通过IEC的平面内有效场实现的.
- 观测和描述了场驱动和电流驱动的不对称域墙壁运动.
- 证明了多态突触可塑性功能,将异常的霍尔电阻与当前脉冲相关联.
结论:
- 这种T型SOT装置可实现高效的磁化切换和域壁运动.
- 该设备显示了实现多态突触可塑性的潜力.
- 这项研究强调了该设备对下一代自旋电子记忆和神经形态计算的承诺.
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