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缺陷促进了高导电性石墨烯薄膜的石墨化.

Qing Zhang^1,2, Qinwei Wei^1,2, Kun Huang^1,2

¹Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.

National science review

|July 7, 2023

概括

兴奋剂通过在高温石墨化过程中保留缺陷来增强石墨烯薄膜结晶. 这大大提高了先进的电子和热管理应用的电热导电性.

关键词:

缺陷缺陷缺陷缺陷缺陷电气和热导电性的导电性.石墨烯薄膜的使用方法图形化图形化图形化图形化热管理和EMI屏蔽的使用.

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科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

宏观的,高度结晶的石墨烯薄膜对于先进的电子,电信和热管理至关重要.
目前的石墨化方法产生小粒度和结构障碍,限制了石墨烯的导电性.
像氧化石墨烯这样的石墨烯前体的高温加工会导致膜的性能不佳.

研究的目的:

开发一种制造具有优异电热导电性的高晶石烯薄膜的方法.
调查高温缺陷在加速谷物生长和石墨烯石墨化过程中的排序中的作用.
探索兴奋剂在控制缺陷保留以增强石墨烯特性方面的潜力.

主要方法:

在高温石墨化 (2000°C3000°C) 过程中,利用兴奋剂来延缓缺陷石墨烯中的晶格恢复.
分析保留缺陷 (空隙,位移,粒度边界) 对石墨烯膜微观结构和排序的影响.
描述制造的石墨烯薄膜的电导率,热导率和电磁干扰屏蔽效果.

主要成果:

兴奋剂使粒径增加了100倍,电导率 (64倍) 和热导率 (28倍) 在2000°C和3000°C之间显著改善.
获得了高度排序的晶体石墨烯薄膜,电导率为~2.0 × 10^4 S cm−1和热导率为~1.7 × 103 W m−1 K−1.1.
证明了超高的电磁干扰屏蔽效率,在10微米厚度下达到~90dB,性能优于MXene薄膜.

结论:

高温缺陷,当通过兴奋剂保留时,会大大加快石墨烯薄膜结晶和性能增强.
开发的方法可以产生高导电性石墨烯薄膜,适用于苛刻的电子和热应用.
该战略提供了一种通用方法,以改善各种碳材料的合成和性能.