结晶学剪切平面的缺陷介导的增长
Jianyu Cao1,2, Jing Xia1, Xuanze Li1
1Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
Small (Weinheim an der Bergstrasse, Germany)
|July 7, 2023
概括
晶体剪切 (CS) 平面,或瓦兹利缺陷,在金属氧化物中至关重要. 这项研究揭示了它们在WO3中的原子规模形成和传播,使得可控缺陷工程成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
- 纳米技术纳米技术
背景情况:
- 晶体剪切 (CS) 平面,也称为瓦兹利缺陷,显著影响金属氧化物特性.
- 它们在阳极材料和催化剂中的作用是公认的,但原子规模的形成机制仍然难以捉摸.
研究的目的:
- 在单临床WO3中阐明CS平面的原子尺度形成和传播动态.
- 调查缺陷对CS平面演变和材料特性的影响.
主要方法:
- 在现场扫描传输电子显微镜 (STEM) 用于直接的原子尺度成像.
- 对CS平面核和迁移路径的观察.
- 与理论计算的相关性.
主要成果:
- CS平面在边缘阶段缺陷中形成核,并通过WO6八面体的合作迁移传播.
- 观察到对 (102) CS飞机而不是 (103) 飞机的偏好,与理论预测一致.
- 一个半导体到金属的过渡伴随着CS平面的进化.
- 使用人工缺陷实现了CS平面和V形结构的受控生长.
结论:
- 提供了 WO3 中 CS 平面演变的第一个直接的原子尺度理解.
- 证明了控制缺陷结构的潜力,以量身定制材料属性.
- 突出了原子结构进化和电子性质变化之间的联系.
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