对于神经形态系统应用的新兴记忆晶体管:一篇评论
Tao You1,2, Miao Zhao1,2, Zhikang Fan1,2
1High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China.
Sensors (Basel, Switzerland)
|July 8, 2023
概括
墨晶体管模仿大脑的人工智能,提供低功耗,集成感应和处理. 这篇评论探讨了先进的神经形态系统的各种材料和制造.
科学领域:
- 材料科学 材料科学 材料科学
- 神经科学是一个神经科学.
- 计算机工程 计算机工程
背景情况:
- ·诺伊曼架构在设备集成,功耗和实时处理方面面临局限性.
- 人类大脑的并行计算和自适应学习激发了新的计算范式.
研究的目的:
- 审查用于人工智能应用的memristor技术.
- 分析用于增强神经形态系统的材料和制造方法.
- 讨论在晶体发展中的挑战和未来方向.
主要方法:
- 审查各种道材料用于memtransistors (2D材料,石墨烯,BP,CNT,IGZO).
- 对人工突触的电材料 (铁电,石化,HZO,In2Se3,电解质) 的分析.
- 检查设备制造技术,以改善存储和计算.
主要成果:
- 墨晶体管为传感,存储和处理复杂信号提供了一个"全合一"的低功耗解决方案.
- 各种材料表现出不同的神经形态行为和机制.
- 新兴技术显示了更好的集成存储和计算性能.
结论:
- 墨晶体管是节能神经形态计算的一个有前途的技术.
- 材料选择和设备设计对于优化memtransistor性能至关重要.
- 需要进一步的研究来克服当前在人工智能系统中广泛采用的挑战.
相关概念视频
MOSFET
517
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
517
MOSFET: Enhancement Mode
389
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
389
MOS Capacitor
851
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
851
Field Effect Transistor
481
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
481
Characteristics of MOSFET
423
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
423


