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Updated: Jul 24, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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在低偏差的CdZnTe传感器中建模极化效应

Jindřich Pipek1, Roman Grill1, Marián Betušiak1

  • 1Institute of Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, CZ-121 16 Prague, Czech Republic.

Sensors (Basel, Switzerland)
|July 8, 2023
PubMed
概括

像素化 telluride (CdTe) 和 telluride (CdZnTe) 传感器可以在高流量X射线环境中工作. 这项研究通过数值模拟了它们的性能,优化了光谱CT检测器设置.

关键词:
在CdZnTeTe高流量的高流量.两极分化是一种极化.辐射探测器的辐射探测器

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