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新型SiGe/Si异质连接双门道FETs与异质介电器用于高性能

Qing Chen¹, Rong Sun¹, Ruixia Miao¹

¹School of Electronic Engineering, Xi'an University of Posts & Telecommunications, Xi'an 710121, China.

|July 8, 2023

概括

一个新型的异质连接双门道场效应晶体管 (HJ-HD-P-DGTFET) 与辅助道屏障层增强了性能. 该设备实现了更高的启动电流和减少的双极电流,以实现高效的无线电频率应用.

科学领域:

半导体设备物理学半导体设备物理
材料科学是一种材料科学.
纳米电子学纳米电子学

背景情况:

道场效应晶体管 (TFET) 为低功耗电子提供了潜力.
优化TFET性能需要仔细的材料选择和设备架构.
异质连接和先进的门介电器是改善TFET特性的关键.

研究的目的:

提出和研究一个新的SiGe/Si异质连接双门异质介电道场效应晶体管 (HJ-HD-P-DGTFET).
为了增强状态电流 (I_on) 和抑制双极电流 (I_amb).
评估设备适用于低功率射频 (RF) 应用的适用性.

主要方法:

使用技术计算机辅助设计 (TCAD) 工具进行设备模拟.
纳入SiGe/Si异质连接,以改善道工程.
低k (SiO₂) 和高k (HfO₂) 门介电物的战略放置.
集成一个n+doped辅助道壁垒层 (口袋).

主要成果:

实现了7.79 × 10-5 A/μm 的高状态电流 (I_on).
证明了8.16 × 10-18 A/μm的压抑的状态外电流 (I_off).
获得了19mV/dec的最小下值波动 (SS_min),19.95GHz的截止频率 (f_T),2.07GHz的增益带宽产物 (GBW).

结论:

拟议的HJ-HD-P-DGTFET有效地增强现状电流并抑制双极性泄漏.
该设备表现出卓越的性能指标,包括高的I_on/I_off比率和良好的射频特性.
这种新型TFET设计对未来的低功耗射频应用具有重大前景.

关键词:

鱼类和渔业总局 (DGTFET) 负责这些工作.带到带的道 (BTBT)不同类型的介电器.异质连接异质连接一个口袋的口袋.

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