基于Power SiC MOSFET的扩展卡尔曼粒子过器的剩余有用寿命预测
Wei Wu1, Yongqian Gu1, Mingkang Yu1
1School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Micromachines
|July 8, 2023
概括
研究人员开发了一种新方法来预测碳化物金属氧化物半导体场效应晶体管 (SiC MOSFET) 的剩余使用寿命 (RUL). 与传统方法相比,这种扩展卡尔曼粒子波器 (EPF) 方法可提高RUL预测准确率约10%.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体设备物理 半导体设备物理
背景情况:
- 基于的设备正在接近其高功率应用的性能极限.
- 碳化金属氧化物半导体场效应晶体管 (SiC MOSFETs) 是有希望的替代品,但面临着可靠性挑战.
- 关键的可靠性问题包括偏差温度不稳定性,值电压漂移和短路强度降低.
研究的目的:
- 为满足在SiC MOSFET中准确预测剩余使用寿命 (RUL) 的关键需求.
- 为SiC MOSFETs提出和验证一种新的RUL估计方法.
- 提高使用SiC MOSFETs的高功率电子系统的可靠性和操作安全性.
主要方法:
- 开发一个新的功率循环测试平台来监测SiC MOSFET.
- 使用现状电压作为降解监测的前体.
- 基于现状电压降解模型的扩展卡尔曼粒子波器 (EPF) 算法的实现.
主要成果:
- 拟议的EPF方法显著减少了RUL预测错误.
- 使用40%的数据输入,RUL预测误差从20.5% (传统的粒子波器算法 - PF) 降至11.5%的EPF.
- 预测寿命的准确性提高了大约10%.
结论:
- 基于EPF的RUL估计方法为SiC MOSFET提供了更高的准确性.
- 这种方法提高了宽带差功率半导体设备的可靠性评估.
- 这些发现有助于开发更强大,更可预测的高功率电子系统.
相关概念视频
01:17Characteristics of MOSFET
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
423
01:23Small-Signal Analysis of MOSFET Amplifiers
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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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01:16MOSFET
517
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
517
01:20MOSFET: Depletion Mode
399
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
399
01:22MOSFET: Enhancement Mode
389
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
389
01:25MOS Capacitor
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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