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Updated: Jul 24, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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一个新的低功耗和软错误恢复 10T SRAM 单元格

Changjun Liu1, Hongxia Liu1, Jianye Yang1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|July 8, 2023
PubMed
概括

本研究介绍了PP10T,这是一种新型的低功耗静态随机存取存储器 (SRAM) 单元,旨在用于软错误恢复. PP10T 细胞表现出强大的数据保留能力和对读取干扰的免疫力,性能优于标准的 6T SRAM 细胞.

关键词:
低功率的低功率电源是什么辐射硬度 辐射硬度单一事件的颠覆 (SEU)软错误是一个软错误.

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