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Updated: Jul 24, 2025

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高压RC-IGBT内置二极管的低开关损失与缩短的P+发射器

Wei Wu1, Yansong Li1, Mingkang Yu1

  • 1School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

Micromachines
|July 8, 2023
PubMed
概括

一种新型的高压反导绝缘门双极晶体管 (RC-IGBT) 具有缩短的P+发射器,显著降低了内置二极管中的切换损失. 这种设计改进使逆回收损失降低了20%,而不会影响IGBT的性能.

关键词:
IGBT的特征 IGBT的特征这是一个RC-IGBT.反向回收的特点 逆回收的特点

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