环振荡器的单事件硬化方案应用于耐辐射PLL微系统
Qi Xiang1, Hongxia Liu1, Yulun Zhou1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|July 8, 2023
概括
本研究引入了一种新的硬化电压控制振荡器 (VCO) 电路,以提高相锁循环 (PLL) 微系统的辐射耐受性. 新型设计显著降低了对航空航天应用中单一事件效应的敏感性.
科学领域:
- 电子工程 电子工程
- 辐射的影响 辐射效应
- 半导体设备 半导体设备
背景情况:
- 阶段锁环 (PLL) 微系统在航空航天领域至关重要,但易受辐射诱导的单一事件效应 (SEE) 影响.
- 电压控制振荡器 (VCO) 是易受高能粒子轰炸的关键PLL组件,导致性能降低.
研究的目的:
- 提出并验证一种新的硬化VCO电路设计.
- 增强PLL微系统用于航空航天环境的抗辐射能力.
- 为了减轻单事件瞬态 (SET) 对VCO性能的影响.
主要方法:
- 设计了一个新的VCO硬化电路,采用带有无偏差串联电压开关逻辑结构的延迟电池和尾电流晶体管.
- 减少了敏感节点,并利用积极的反来加速SET恢复过程.
- 模拟使用SMIC 130nm CMOS工艺进行.
主要成果:
- 拟议的硬化VCO电路对单一事件影响的敏感性降低.
- 在PLL与硬化VCO的最大相位移差减少了53.5%.
- 加快的SET恢复过程显著提高了电路弹性.
结论:
- 开发的硬化VCO结构有效地降低了PLL对SETs的敏感性.
- 在辐射环境中提高PLL的可靠性是通过这种新的硬化VCO设计实现的.
- 这项工作有助于开发更强大的微电子器件用于太空应用.
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