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Updated: Jul 24, 2025

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在SOI LDMOS中通过使用步骤P型兴奋剂埋藏层进行过渡性分解电压增强的数值调查

Xiaoming Yang1, Taiqiang Cao1, Xiaohua Zhang2

  • 1School of Electrical Engineering and Electronic Information, Xihua University, Chengdu 610039, China.

Micromachines
|July 8, 2023
PubMed
概括

一个新的步骤P型兴奋剂埋藏层 (SPBL) 显著提高了在绝缘体 (SOI) LDMOS设备的短暂故障电压 (TrBV) 和关机时间. 这种SPBL还可以降低特定的启动阻力 (R_on,sp),提高设备的整体性能.

关键词:
在 MOS 设备上,MOS 设备是断裂电压的故障电压是什么深度耗尽的消耗情况.在绝缘体上的绝缘体步骤P类型的兴奋剂埋葬层层.短暂的故障电压是短暂的.

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